Chipmaker Intel Corporation has produced what it claims are the first fully functional SRAM (Static Random Access Memory) chips using 45nm process technology, its next-generation, high-volume semiconductor manufacturing process.

According to Intel, this means the company is on track to manufacture chips with the new technology in 2007 using 300mm wafers. The 45nm SRAM chip has more than 1 billion transistors.

Currently, Intel is the largest producer of semiconductors using 65nm process technology, with two manufacturing facilities making 65nm chips in Arizona and Oregon and two more coming online this year in Ireland and Oregon.

In addition to the manufacturing capabilities of its D1D facility in Oregon, where the initial 45nm development efforts are underway, Intel has announced two high-volume fabs under construction to manufacture chips using the 45nm process technology: Fab 32 in Arizona and Fab 28 in Israel.

"Being first to high volume with 65nm process technology and the first with a working 45nm chip highlights Intels leadership position in chip technology and manufacturing," said Bill Holt, vice president, general manger, Intel Technology and Manufacturing Group. "Intel has a long history of translating technology leaps into tangible benefits that people appreciate. Our 45nm technology will provide the foundation for delivering PCs with improved performance-per-watt that will enhance the user experience."

According to Intel, the new 45nm process technology will enable the production of chips with more than five times less leakage power than those made today. This will improve battery life for mobile devices and increase opportunities for building smaller, more powerful platforms.

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